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| DISCRETE SEMICONDUCTORS DATA SHEET BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors in a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power, chopper or switching applications in industrial service. PINNING 1 2 3 = drain = source = gate BSR56; BSR57; BSR58 handbook, halfpage 3 d s g 1 Top view 2 MAM385 Note 1. Drain and source are interchangeable. Marking code BSR56 = M4P BSR57 = M5P BSR58 = M6P Fig.1 Simplified outline and symbol, SOT23. QUICK REFERENCE DATA BSR56 Drain-source voltage Total power dissipation up to Tamb = 40 C Drain current VDS = 15 V; VGS = 0 Gate-source cut-off voltage VDS = 15 V; ID = 0.5 nA Drain-source resistance (on) at f = 1 kHz ID = 0; VGS = 0 Feedback capacitance at f = 1 MHz -VGS = 10 V; VDS = 0 Turn-off time VDD = 10 V; VGS = 0 ID = 20 mA; -VGSM = 10 V ID = 10 mA; -VGSM = 6 V ID = 5 mA; -VGSM = 4 V April 1991 2 toff toff toff < < < 25 - - - 50 - - ns - ns 100 ns Crs < 5 5 5 pF rds on < 25 40 60 -V(P)GS > < 4 10 2 6 0.8 V 4V IDSS > < 50 - 20 100 8 mA 80 mA VDS Ptot max. max. 40 250 BSR57 40 250 BSR58 40 V 250 mW Philips Semiconductors Product specification N-channel FETs RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-gate voltage Gate-source voltage Forward gate current Total power dissipation up to Tamb = 40 C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) Notes 1. Mounted on a ceramic substrate of 8 mm x 10 mm x 0.7 mm. CHARACTERISTICS Tj = 25 C unless otherwise specified Gate-source cut-off current VDS = 0 V; -VGS = 20 V Drain cut-off current VDS = 15 V; -VGS = 10 V IDSX BSR56; BSR57; BSR58 VDS VDGO -VGSO IGF Ptot Tstg Tj max. max. max. max. max. max. 40 V 40 V 40 V 50 mA 250 mW 150 C -65 to +150 C Rth j-a = 430 K/W -IGSS max. max. BSR57 20 100 40 2 6 - 500 - 40 5 1.0 nA 1.0 nA BSR58 8 mA 80 mA 40 V 0.8 V 4V - mV - mV 400 mV 60 5 pF BSR56 Drain current VDS = 15 V; VGS = 0 Gate-source breakdown voltage -IG = 1 A; VDS = 0 Gate-source cut-off voltage ID = 0,5 nA; VDS = 15 V Drain-source voltage (on) ID = 20 mA; VGS = 0 ID = 10 mA; VGS = 0 ID = 5 mA; VGS = 0 Drain-source resistance (on) at f = 1 kHz ID = 0; VGS = 0; Ta = 25 C Feedback capacitance at f = 1 MHz -VGS = 10 V; VDS = 0 Crss < 5 rds on < 25 VDSon VDSon VDSon < < < 750 - - -V(P)GS > < 4 10 -V(BR)GSS > 40 IDSS > < 50 - April 1991 3 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 BSR56 Switching times VDD = 10 V; VGS = 0 Conditions ID and -VGSM Delay time Rise time Turn-off time ID -VGSM td tr toff = = < < < 20 10 6 3 25 BSR57 10 6 6 4 50 BSR58 5 mA 4V 10 ns 10 ns 100 ns 0 handbook, halfpage handbook, halfpage VDD R Vi VGSM td tr 10% Vo 90% MBK299 200 ns toff Vi 50 Vo T.U.T MBK298 Fig.2 Switching times waveforms. Fig.3 Test circuit. BSR56; R = BSR57; R = BSR58; R = 464 953 1910 handbook, halfpage 300 MDA245 Ptot (mW) 200 Pulse generator tr = tf 1 ns Zo = 0.02 = 50 100 Oscilloscope tr 0.75 ns 1 M 2.5 pF 0 0 40 80 120 200 160 Tamb (C) Ri Ci Fig.4 Power derating curve. April 1991 4 Philips Semiconductors Product specification N-channel FETs PACKAGE OUTLINE Plastic surface mounted package; 3 leads BSR56; BSR57; BSR58 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 April 1991 5 Philips Semiconductors Product specification N-channel FETs DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values BSR56; BSR57; BSR58 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1991 6 |
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